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 WTK9435
Surface Mount P-Channel Enhancement Mode MOSFET
D
P b Lead(Pb)-Free
DRAIN CURRENT -5.3 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE
1 3
S S
8 7
D
2
D
6
S
Features:
D
G
4
5
* Super high dense * Cell design for low RDS(ON) * RDS(ON)<55m @VGS = -10V * RDS(ON)<90m @VGS = -4.5V * Simple Drive Requirement * Lower On-resistance * Fast Switching
1
Description:
The WTK9435 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
SOP-8
Maximum Ratings (TA=25C Unless Otherwise Specified)
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (1) Power Dissipation (TA =25C) (TA =25C) (TA =70C) Symbol VDS VGS ID IDM PD R JA TJ Tstg Value -30 16 -5.3 -4.7 -20 2.5 50 +150 -55 to +150 Unite V V A A W C/W C C
Maximax Junction-to-Ambient Operating Junction Temperature Range Storage Temperature Range
Device Marking
WTK9435=9435SC
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Electrical Characteristics Static
Characteristic (TA =25C U nless otherwise noted) Symbol
V(BR)DSS VGS (th) IGSS IDSS
Min
-30 -1.0 -
Typ
-
Max
-3.0 100 -1 -5
55 90
Unit
V V nA A
Drain-Source Breakdown Voltage VGS=0V, ID=-250 uA Gate-Source Threshold Voltage VDS=VGS, ID=-250 uA Gate-Source Leakage Current + VDS=0V, VGS=-16V Zero Gate Voltage Drain Current VDS=-30V, VGS=0V VDS=-24V, VGS=0V Drain-Source On-Resistance VGS=-10V, ID=-5.3A VGS=-4.5V, ID=-4.2A Forward Transconductance VDS=-10V , ID=-5.3A
-
-
R DS (on)
gfs
-
10
m S
-
Dynamic
Input Capacitance VDS=-15V, VGS=0V, f=1MHZ Output Capacitance VDS=-15V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=-15V, VGS=0V, f=1MHZ Ciss Coss Crss
-
745 440 120
PF
Switching
Turn-On Delay Time(2) VDS = -15V, ID = -1A, VGS = -10V, RG = 6 , RD = 15 Rise Time VDS = -15V, ID = -1A, VGS = -10V, RG = 6 , RD = 15 Turn-O Time VDS = -15V, ID = -1A, VGS = -10V, RG = 6 , RD = 15 Fall Time VDS = -15V, ID = -1A, VGS = -10V, RG = 6 , RD = 15 Total Gate Charge(2) VDS=-15V, ID=-5.3A, V GS =-10V Gate-Source Charge VDS=-15V, ID=-5.3A, V GS =-10V Gate-Drain Charge VDS=-15V, ID=-5.3A, V GS =-10V Drain-Source Diode Forward Voltage(2) VGS=0V, IS=-2.6A Continuous Source Current(Body Diode) VD=VG=0V, VS=-1.2V Pulsed Source Current(Body Diode)(1) Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. td(on) tr td(o ) tf Qg Qgs Qgd
-
9 15 75 40 28 3 7 -0.75 -
-
nS nS nS nS nc nc nc V A A
-
-1.2 -2.6 -20
VSD IS ISM
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Characteristics Curve
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SOP-8 Package Outline Dimensions
Unit:mm
1
L
E1 D 7 (4X) A C 7(4X)
2A
A1
e
B
eB
SYMBOLS
MILLIMETERS MAX MIN
A A1 B C D E1 eB e L
1.75 1.35 0.20 0.10 0.45 0.35 0.18 0.23 4.69 4.98 3.56 4.06 5.70 6.30 1.27 BSC 0.60 0.80 0 8
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